AIGaN-GaN heterostructure FETs with offset gate design
نویسندگان
چکیده
and test fucture. The light generated by a high speed 800nm wavelength transmitter was coupled to the detectors using a singlemode fibre. The level of optical power was adjusted by a variable optical attenuator. Fig. 3 shows the eye diagram of a 2.4Gbit/s input current to the laser transmitter and the received eye diagram at 1V9 error rate. The bit error rate (BER) has been measured against incident optical power. An error rate of lk9 has been obtained at a received power of -25.0dBm. In summary, we have fabricated an optoelectronic receiver based on GaAs MESFET technology and a GaAs MSM photodiode. The receiver has an MSM photodiode, a preamplifier, a postamplifier, a comparator, a decision circuit and an ECL driver. An error rate of < lo-’ has been demonstrated at 2.4Gbitis.
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